TLP833(f) 2007-10-01 1 toshiba photointerrupter in frared led + phototransistor TLP833(f) lead(pb)-free copiers, printers, fax machines vcrs, microwave ovens, air conditioners automatic vending machines various position detection sensors the TLP833(f) is a photointerrupter which incorporates a high radiant power gaas led and a fast ? response si phototransistor. the package has a deep gap. ? package with deep gap (gap: 12 mm) ? designed for direct mounting on printed circuit boards (positioning pins included). ? gap: 5mm ? resolution: slit width 0.5mm ? high current transfer ratio: i c /i f = 5% (min) ? high temperature operation: t opr = 95c (max) ? package material: polybutylene terephthalate (ul94 ? v ? 0) ? detector impermeable to visible light absolute maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma 25c < ta Q 85c ?0.33 forward current derating ta > 85c i f /c ?2 ma/c led reverse voltage v r 5 v collector ? emitter voltage v ceo 35 v emitter ?collector voltage v eco 5 v collector power dissipation p c 75 mw detector collector power dissipation derating (ta > 25c) p c /c ?1 mw/c collector current i c 50 ma operating temperature range t opr ?30~85 c storage temperature range t stg ?40~100 c soldering temperature (5 s) t sol 260 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). toshiba weight: 1g (typ.)
TLP833(f) 2007-10-01 2 markings operating ranges characteristic symbol min typ. max unit supply voltage v cc D 5 24 v forward current i f D D 25 ma operating temperature t opr ?10 D 75 c optical electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10ma 1.00 1.15 1.30 v reverse current i r v r = 5v D D 10 a led peak emission wavelength p i f = 10ma D 940 D nm dark current i d (i ceo ) v ce = 24v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D D 870 D nm current transfer ratio i c /i f v ce = 2v, i f = 10ma 5 D 100 % collector ? emitter saturation voltage v ce (sat) i f = 20ma, i c = 0.5ma D 0.1 0.35 v rise time t r D 15 D coupled fall time t f v cc = 5v, i c = 1ma r l = 1k ? (note) D 15 D s (note): switching time measurement circuit and waveform monthly lot number year of manufacture (last digit of year of manufacture) month of manufacture (january to december denoted by letters a to l respectively) v out v cc i f r l 90% 10% v out t f t s i f t d t r
TLP833(f) 2007-10-01 3 precautions 1. clean only the soldered part of the leads. do no t immerse the entire package in the cleaning solvent. 2. the package is made of polybutylene ? terephthalate. oil or chemicals may cause the package to melt or crack. care must be taken in relation to the environm ent in which the device is to be installed. 3. mount the device on a level surface. 4. keep the device away from external light. although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. conversion efficiency falls over time due to the current which flows in the infrared led. when designing a circuit, take into account this change in conversion efficiency over time. the ratio of fluctuation in conversion efficiency to fluctuation in infrared led optical output is 1 : 1. (0)p (t)p (0)/ii (t)/ii o o fc fc =
TLP833(f) 2007-10-01 4 package dimensions unit: mm weight: 1 g (typ.) pin connection 1. anode 2. cathode 3. collector 4. emitter 1 2 4 3 (c0.2) 2.00.1 2.30.1 (0.1) 1.20.1 4? ( r0.1 ) 1.340.04 1.340.04 a b
TLP833(f) 2007-10-01 5 0 20 40 60 80 100 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 60 40 20 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 80 0 0 60 40 20 20 40 60 80 100 i c ? i f forward current i f (ma) collector current i c (ma) 10 0.1 1 5 3 1 0.5 0.3 3 5 10 30 50 100 ta =25 c v ce = 2 v v ce = 0.4 v sample 2 sample 1 i f ? v f (typ.) forward voltage v f (v) forward current i f (ma) 50 1 0.8 30 10 5 3 0.9 1.0 1.1 1.2 1.3 1.4 ta=75c 25 0 ? 25 50 i c / i f ? i f forward current i f (ma) current transfer ratio i c / i f (%) 100 1 50 30 10 5 3 3 5 10 30 100 50 ta =25 c v ce = 2 v v ce = 0.4 v sample 2 sample 1 i c ? v ce (typ.) collector-emitter voltage v ce (v) collector current i c (ma) 6 0 0 5 3 2 1 2 4 6 8 10 12 4 20 15 10 i f =5ma ta = 25 c
TLP833(f) 2007-10-01 6 relative i c ? ta (typ.) ambient temperature ta (c) relative collector current 1.2 0.2 1.0 0.8 0.6 0.4 ? 40 ? 20 0 20 40 60 80 100 v ce = 2 v i f = 20 ma i f = 10 ma i f = 5 ma v ce(sat) ? ta (typ.) ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.20 0 ? 40 0.16 0.12 0.08 0.04 ? 20 0 20 40 60 80 100 i c = 0.5 ma i f = 20 ma switching characteristics (non saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) 500 0.3 0.1 300 100 50 30 10 5 3 1 0.5 0.3 0.5 1 3 5 10 30 50 t s t d t r ? t f ta = 25 c v cc = 5 v v out = 1 v switching characteristics (saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) 3000 3 1 1000 500 300 100 50 30 10 5 3 5 10 30 50 100 300 500 t d t r t s t f ta = 25 c i f = 20 ma v cc = 5 v v out R 4.65v i d (i ceo) ? ta (typ.) ambient temperature ta (c) dark current i d( i ceo) ( a) 5 0 1 10 ? 1 10 ? 2 10 ? 3 10 ? 4 20 40 60 80 100 120 v ce = 24 v 10 5 v out v cc i f r l 90% 10% v out t f t s i f t d t r switching time test circuit
TLP833(f) 2007-10-01 7 relative positioning of shutter and device for normal operation position the shutter and the device as shown in the figure below. by considering the device's detection direction characteristic and switching time, determine the shutter slit width and pitch. detection position characteristics(1) (typ.) distance d (mm) relative collector current 1.2 0 ? 3 1.0 0.8 0.6 0.4 0.2 ? 2 ? 1 0 1 2 3 4 detection position d=00.3mm 0 ? + d i f = 10ma v ce = 2v ta = 25c shutter detection position characteristics (2) (typ.) distance d (mm) relative collector current 1.2 0 1.0 0.8 0.6 0.4 0.2 10 11 12 13 14 15 16 d i f =10ma v ce =2v ta=25c shutter +1.5 detection position d=12 ? 1.1mm shutter a a center of sensor 12 10.9max 13.5min cross section between a and a unit in mm
TLP833(f) 2007-10-01 8 re st ri ct io ns o n pr o du ct us e 2007 0701- en ? th e inf or ma tio n co nta ine d he rei n is su bje ct to ch an ge wit ho ut not ice . ? to sh ib a is co nti nu all y wo rki ng to im pr ov e the qu alit y an
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